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to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation (http://www.renesas.com) send any inquiries to http://www.renesas.com/inquiry.
notice 1. all information included in this document is current as of the date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas el ectronics products li sted herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular and careful attention to additional and different information to be disclosed by rene sas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringeme nt of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electroni cs products or techni cal information descri bed in this document . no license, express, implied or otherwise, is granted hereby under any patents, copyri ghts or other intell ectual property right s of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any re nesas electronics product, wh ether in whole or in part . 4. descriptions of circuits, software and other related informat ion in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully re sponsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this doc ument, you should comply with the applicable export control laws and regulations and follow the proc edures required by such laws and re gulations. you should not use renesas electronics products or the technology described in this docum ent for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated into any products or systems whose manufacture, us e, or sale is prohibited under any applicable dom estic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing th e information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. renesas electronics products ar e classified according to the following three quality grades: ?standard?, ?high quality?, an d ?specific?. the recommended applications for each renesas electronics product de pends on the product?s quality grade, as indicated below. you must check the qua lity grade of each renesas electronics pr oduct before using it in a particular application. you may not use any renesas electronics produc t for any application categorized as ?speci fic? without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. re nesas electronics shall not be in any way liable for any damages or losses incurred by you or third partie s arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intende d where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electr onics data sheets or data books, etc. ?standard?: computers; office equipmen t; communications e quipment; test and measurement equipment; audio and visual equipment; home electronic a ppliances; machine tools; personal electronic equipmen t; and industrial robots. ?high quality?: transportation equi pment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specif ically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support device s or systems), surgical im plantations, or healthcare intervention (e.g. excision, etc.), and any other applicati ons or purposes that pose a di rect threat to human life. 8. you should use the renesas electronics pr oducts described in this document within the range specified by renesas electronics , especially with respect to the maximum ra ting, operating supply voltage range, movement power volta ge range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its produc ts, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate a nd malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physic al injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safe ty design for hardware and software in cluding but not limited to redundancy, fire control and malfunction prevention, appropri ate treatment for aging degradation or an y other appropriate measures. because the evaluation of microcomputer software alone is very difficult , please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesa s electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regul ate the inclusion or use of c ontrolled substances, including wi thout limitation, the eu rohs directive. renesas electronics assumes no liability for damage s or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in w hole or in part, without prio r written consent of renes as electronics. 12. please contact a renesa s electronics sales office if you have any questi ons regarding the informat ion contained in this document or renesas electroni cs products, or if you have any other inquiries. (note 1) ?renesas electronics? as used in this document means renesas electronics corporation and also includes its majority- owned subsidiaries. (note 2) ?renesas electronics product(s)? means any product developed or manufactured by or for renesas electronics.
2004, 2007 description the ne55410gr is an n-channel enhancement -mode ldmos fet designed for driver 0.1 to 2.6 ghz pa, such as, cellular base station amplifier, anal og/digital tv-transmitters, and the other pa?s. this product has two different fet's on one die manufactured using our newmos technol ogy (our wsi gate lateral mos fet), and its nitride surface passivation and quadruple layer aluminum silic on metalization offer a high degree of reliability. features ? two different fet?s (q1 : p out = 2 w, q2 : p out = 10 w) in one package ? over 25 db gain available by connecting two fet?s in series : g l (q1) = 13.5 db typ. (v ds = 28 v, i dset (q1) = 20 ma, f = 2 140 mhz) : g l (q2) = 11.0 db typ. (v ds = 28 v, i dset (q2) = 100 ma, f = 2 140 mhz) ? high 1 db compression output power : p o (1 db) (q1) = 35.4 dbm typ. (v ds = 28 v, i dset (q1) = 20 ma, f = 2 140 mhz) : p o (1 db) (q2) = 40.4 dbm typ. (v ds = 28 v, i dset (q2) = 100 ma, f = 2 140 mhz) ? high drain efficiency : d (q1) = 52% typ. (v ds = 28 v, i dset (q1) = 20 ma, f = 2 140 mhz) : d (q2) = 46% typ. (v ds = 28 v, i dset (q2) = 100 ma, f = 2 140 mhz) ? low intermodulation distortion : im 3 (q1) = ? 40 dbc typ. (v ds = 28 v, i dset (q1+q2) = 120 ma, f = 2 132.5/2 147.5 mhz, p out = 33 dbm (2 tones) ) ? single supply (v ds : 3 v < v ds 32 v) ? excellent thermal stability ? surface mount type and super low cost pl astic package : 16-pin plastic htssop ? integrated esd protection ? excellent stability against hci (hot carrier injection) application ? digital cellular base station pa : w-cdma/gsm/d-amps/n-cdma/pcs etc. ? uhf-band tv transmitter pa the mark shows major revised points. the revised points can be easily s earched by copying an "" in the pdf file and specifying it in the "find what:" field. data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. ldmos field effect transistor ne55410gr n-channel silicon power ldmos fet for 2 w + 10 w vhf to l-band single-end power amplifier document no. pu10542ej03v0ds (3rd edition) date published january 2007 ns cp(n) printed in japan
ordering information part number order number package marking supplying form ne55410gr NE55410GR-T3-AZ 16- pin plastic htssop (pb-free) note 55410 ? embossed tape 12 mm wide ? pin 1 and 8 indicates pull-out direction of tape ? qty 1 kpcs/reel note with regards to terminal solder (the solder contains lead) plated products (conv entionally plated), contact your nearby sales office. remark to order evaluation samples, contact your nearby sales office. part number for sample order: ne55410gr pin connections and internal block diagram pin no. pin name pin no. pin name 1 source 9 source 2 drain (q2) 10 gate (q1) 3 drain (q2) 11 source 4 drain (q2) 12 drain (q1) 5 drain (q2) 13 source 6 source 14 gate (q2) 7 gate (q1) 15 gate (q2) 8 source 16 source 9 10 11 12 13 14 15 16 8 (top view) 7 6 5 4 3 2 1 q1 q2 s s s s s s s s s s s remark all the terminals of a q2 connected to a circuit. backside : source ( s ) absolute maximum ratings (t a = +25 c, unless otherwise specified) parameter symbol test conditions ratings unit drain to source voltage v ds 65 v gate to source voltage v gs 7 v drain current (q1) i d (q1) 0.25 a drain current (q2) i d (q2) 1.0 a total device dissipation (t case = 25 c) p tot 40 w input power (q1) p in (q1) f = 2.14 ghz, v ds = 28 v 0.3 w input power (q2) p in (q2) f = 2.14 ghz, v ds = 28 v 1.5 w channel temperature t ch 150 c storage temperature t stg ? 65 to +150 c data sheet pu10542ej03v0ds 2 ne55410gr
thermal resistance (t a = +25 c) parameter symbol test conditions min. typ. max. unit channel to case resistance r th (ch-c) ? 2.5 3.0 c/w recommended operating conditions (t a = +25 c) parameter symbol min. typ. max. unit drain to source voltage v ds ? 28 32 v gate to source voltage v gs 2.7 3.3 3.7 v input power (q1), cw p in (q1) ? 15 23 dbm input power (q2), cw p in (q2) ? 20 30 dbm average output power (q1), cw note p o (ave.) (q1) ? ? 24 dbm average output power (q2), cw note p o (ave.) (q2) ? ? 30 dbm note when mounting on the pwb that our company recommends. electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit q1 gate to source leak current i gss (q1) v gss = 5v ? ? 1 a drain to source leakage current i dss (q1) v dss = 65 v ? ? 1 ma gate threshold voltage v th (q1) v ds = 10 v, i ds = 1 ma 2.2 2.8 3.4 v transconductance g m (q1) v ds = 28 v, i ds = 20 ma ? 0.09 ? s drain to source breakdown voltage bv dss (q1) i dss = 10 a 65 75 ? v q2 gate to source leak current i gss (q2) v gss = 5v ? ? 1 a drain to source leakage current i dss (q2) v dss = 65 v ? ? 1 ma gate threshold voltage v th (q2) v ds = 10 v, i ds = 1 ma 2.0 2.6 3.2 v transconductance g m (q2) v ds = 28 v, i ds = 100 ma ? 0.45 ? s drain to source breakdown voltage bv dss (q2) i dss = 10 a 65 75 ? v data sheet pu10542ej03v0ds 3 ne55410gr
rf characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit q1 gain 1 db compression output power p o (1 db) f = 2 140 mhz, v ds = 28 v, ? 35.4 ? dbm drain efficiency d i dset = 20 ma ? 52 ? % linear gain g l note1 12 13.5 ? db q2 gain 1 db compression output power p o (1 db) f = 2 140 mhz, v ds = 28 v, ? 40.4 ? dbm drain efficiency d i dset = 100 ma ? 46 ? % linear gain g l note2 9.5 11 ? db gain 1 db compression output power p o (1 db) f = 1 840 mhz, v ds = 28 v, ? 40.5 ? dbm drain efficiency d i dset = 100 ma ? 49 ? % linear gain g l note2 ? 14 ? db q1 + q2 gain 1 db compression output power p o (1 db) f = 880 mhz, v ds = 28 v, ? 41.5 ? dbm drain efficiency d i dset = 120 ma (q1 + q2) ? 55 ? % linear gain g l note3 ? 30 ? db gain 1 db compression output power p o (1 db) f = 2 140 mhz, v ds = 28 v, ? 40.0 ? dbm drain efficiency d i dset = 120 ma (q1 + q2) 34 42 ? % output power p out 39 40 ? db linear gain g l note4 24 25 ? db 3rd order intermodulation distortion im 3 ? ? 40 ? dbc drain efficiency d f = 2 132.5/2 147.5 mhz, v ds = 28 v, 2 carrier w-cdma 3gpp, test model1, 64dpch, 67% clipping, i dset = 120 ma (q1 + q2), ave p out = 33 dbm ? 21 ? % notes 1. p in = 15 dbm 2. p in = 20 dbm 3. p in = 5 dbm 4. p in = 10 dbm data sheet pu10542ej03v0ds 4 ne55410gr
typical characteristics (t a = +25 c, v ds = 28 v, i dset = 120 ma, unless otherwise specified) gain g (db) output power p out (dbm) ?10 ?30 ?40 ?60 ?50 ?70 25 15 20 35 40 45 3rd/5th order intermodulation distortion im 3 /im 5 (dbc) 2 tones output power p out (dbm) im 3 /im 5 vs. 2 tones output power im 3 lower upper ?20 drain efficiency d (%) 30 im 5 cw, f = 960 mhz, 1 mhz spacing ?20 ?35 ?45 ?60 ?55 ?70 25 15 20 35 40 45 3rd/5th order intermodulation distortion im 3 /im 5 (dbc) 2 tones output power p out (dbm) im 3 /im 5 , drain efficiency, vs. 2 tones output power im 3 ?25 30 im 5 ?30 ?40 ?50 ?65 lower upper d 100 70 50 20 30 0 90 80 60 40 10 drain efficiency d (%) w-cdma 3gpp, test model 1, 64 dpch, 67% clipping, center frequency 2.14ghz, 15 mhz spacing vs. output power gain, drain efficiency, gain g (db) output power p out (dbm) drain efficiency d (%) vs. output power gain, drain efficiency, 36 30 32 22 24 26 28 20 20 25 30 35 40 45 g d 34 80 50 60 10 20 30 40 0 70 f = 840 mhz 860 mhz 880 mhz 900 mhz 920 mhz 30 24 26 16 18 20 22 14 20 25 30 35 40 45 g d 28 80 50 60 10 20 30 40 0 70 f = 2.09 ghz 2.11 ghz 2.14 ghz 2.17 ghz 2.19 ghz remark the graphs indicate nominal characteristics. data sheet pu10542ej03v0ds 5 ne55410gr
s-parameters s-parameters/noise parameters are provided on our web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] [device parameters] url http://www.ncsd.necel.com/microwave/index.html data sheet pu10542ej03v0ds 6 ne55410gr
evaluation circuit (f = 840 to 960 mhz, v ds = 28 v, i dset = 120 ma) q1 q2 s s 2 3 4 5 1 6 8 9 11 13 16 (back side) 14 15 s ssssss s ne55410gr 7 10 12 (open) 2.2 nh 18 tl8 tl9 tl10 tl11 15 pf 12 pf 9 pf 1 k 10 6.8 k tl12 tl14 tl15 tl16 tl17 2 pf 6 pf 2 pf tl13 0.22 f a 47 pf tl18 rfout b a tl4 tl6 tl7 3 pf 47 pf tl5 0.001 f b 47 f + v ds (+28 v) 1 k 2.2 k 6.8 k 15 tl1 tl2 tl3 0.22 f 47 pf rfin 0.047 f 56 nh 4 pf tl19 symbol width (mm) length (mm) symbol width (mm) length (mm) tl1 1.0 3.0 tl11 1.0 3.0 tl2 4.5 10.0 tl12 1.0 5.0 tl3 0.5 16.0 tl13 0.8 48.0 tl4 0.5 5.0 tl14 1.0 6.5 tl5 1.0 48.0 tl15 1.0 10.5 tl6 1.0 4.0 tl16 1.0 9.5 tl7 1.0 3.0 tl17 1.0 10.0 tl8 1.0 6.0 tl18 1.0 6.0 tl9 1.0 3.0 tl19 1.0 3.0 tl10 1.0 4.0 the application circuits and their parameters are for reference only and are not intended for use in actual design-ins. data sheet pu10542ej03v0ds 7 ne55410gr
evaluation circuit (f = 840 to 960 mhz, v ds = 28 v, i dset = 120 ma) 6.8 k 0.22 f 1 k (valiable) 2.2 k 15 47 pf 47 pf 12 pf 3 pf 2.2 nh 18 1 k (valiable) 10 6.8 k 0.047 f 9 pf 47 pf 2 pf 2 pf 6 pf 0.22 f 47 f v gs (q2) , +28 v rf out rf in v ds (q1) , +28 v v ds (q2) , +28 v v gs (q1) , +28 v 55410 4 pf 1.5 pf 15 pf 56 nh 0.001 f data sheet pu10542ej03v0ds 8 ne55410gr
evaluation circuit (f = 2 090 to 2 190 mhz, v ds = 28 v, i dset = 120 ma) q1 q2 s s 2 3 4 5 1 6 8 9 11 13 16 (back side) 14 15 s ssssss s ne55410gr 7 10 12 12 nh 10 tl14 tl12 tl13 0.75 pf 1 pf 1 k 10 6.8 k tl15 tl17 tl18 tl20 3 pf 1 pf tl16 0.22 f a 15 pf tl21 rfout b a tl7 tl10 tl11 1 pf 33 pf tl8 0.22 f b 22 f + v ds (+28 v) 1 k 10 6.8 k tl1 tl2 0.22 f 47 pf rfin 0.22 f tl3 tl4 tl5 8.5 pf 2 pf tl6 (open) tl9 tl19 symbol width (mm) length (mm) symbol width (mm) length (mm) tl1 1.0 17.0 tl12 1.0 4.0 tl2 1.0 4.0 tl13 1.0 4.5 tl3 1.0 24.5 tl14 1.0 25.0 tl4 1.0 2.5 tl15 2.5 2.5 tl5 1.0 3.0 tl16 1.0 27.0 tl6 0.5 2.5 tl17 1.0 2.0 tl7 0.5 4.5 tl18 5.0 4.0 tl8 1.0 25.5 tl19 5.0 2.0 tl9 1.0 2.5 tl20 1.0 12.5 tl10 4.5 4.5 tl21 1.0 5.5 tl11 1.0 3.5 the application circuits and their parameters are for reference only and are not intended for use in actual design-ins. data sheet pu10542ej03v0ds 9 ne55410gr
evaluation circuit (f = 2 090 to 2 190 mhz, v ds = 28 v, i dset = 120 ma) v gs (q2) , +28 v v ds (q1) , +28 v v ds (q2) , +28 v 55410 v gs (q1) , +28 v 0.22 f 6.8 k rf out rf in 0.5 pf 15 pf 2 pf 33 pf 1.0 pf 0.22 f 10 12 nh 0.75 pf 10 1 pf 0.22 f 6.8 k 15 pf 1 pf 3 pf 0.22 f 22 f 10 1 k (potentiometer) 1 k (potentiometer) data sheet pu10542ej03v0ds 10 ne55410gr
package dimensions 16-pin plastic htssop (unit: mm) (1.5) 0.90.2 0.200.10 (0.4) (2.7) (0.5) (1.8) (0.1) (2.5) 5.20.2 5.50.3 6.40.3 0.650.1 0.200.10 16 9 1 8 nec 55410 remark ( ): reference value land pattern (unit: mm) 6.40 5.20 0.10 0.50 1.50 4.00 0.48 5.50 1.50 0.20 0.65 0.40 0.20 1.00 1.15 0.28 0.50 0.24 0.24 0.50 0.28 0.28 remarks1. via holes : 158 holes 2. hole size : 0.15 mm 3. min. spacing : 0.354 mm 4. : solder resist or etching data sheet pu10542ej03v0ds 11 ne55410gr
recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recomm ended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperatur e (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below hs350 caution do not use different soldering met hods together (except for partial heating). data sheet pu10542ej03v0ds 12 ne55410gr
the information in this document is current as of january, 2007. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific": ne55410gr

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